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높은 위상변조 효율을 갖는 ＩｎＧａＡｓＰ／ＩｎＰｒｉｄｇｅ 도파로 위상 변조기의 에피박막층 제조방법

Author

변영태; 이석; 박화선; 우덕하; 이종창

Assignee

한국과학기술연구원

Regitration Date

2005-06-21

Registration No.

0498259

Application Date

2003-04-14

Application No.

2003-0023458

Country

KO

URI

https://pubs.kist.re.kr/handle/201004/93553

Appears in Collections:

KIST Patent > 2003

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