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The electrical and optical characteristics of carbon doped GaAs epilayers grown by MOCVD.

Title
The electrical and optical characteristics of carbon doped GaAs epilayers grown by MOCVD.
Authors
김성일; 민석기; 김용; 김무성
Keywords
MOCVD; GaAs; AlGaAs; PL
Issue Date
1994-01
Publisher
The 1st Korean semiconductor conference
Citation
, ?-?
URI
http://pubs.kist.re.kr/handle/201004/9382
Appears in Collections:
KIST Publication > Conference Paper
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