The electrical and optical characteristics of carbon doped GaAs epilayers grown by MOCVD.

Title
The electrical and optical characteristics of carbon doped GaAs epilayers grown by MOCVD.
Authors
김성일민석기김용김무성
Keywords
MOCVD; GaAs; AlGaAs; PL
Issue Date
1994-01
Publisher
The 1st Korean semiconductor conference
Citation
, ?-?
URI
http://pubs.kist.re.kr/handle/201004/9382
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE