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dc.contributor.author김홍석-
dc.contributor.author최인훈-
dc.contributor.author은광용-
dc.contributor.author백영준-
dc.date.accessioned2015-12-02T03:17:58Z-
dc.date.available2015-12-02T03:17:58Z-
dc.date.issued199803-
dc.identifier.citationVOL 4, NO 1, 25-27-
dc.identifier.issn1229-7801-
dc.identifier.other9090-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/9473-
dc.publisher한국세라믹학회지-
dc.publisherJournal of the Korean Ceramic Society-
dc.subjectSiC-
dc.titleFormation of SiC layer on single crystal Si using hot-filament reactor-
dc.typeArticle-
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