Influence of a buried misfit dislocation network on the pyramid-to-dome transition size of Ge self-assembled quantum dots on Si(001)

Title
Influence of a buried misfit dislocation network on the pyramid-to-dome transition size of Ge self-assembled quantum dots on Si(001)
Authors
Hyung-Jun Kim장준연Ya-Hong Xie
Keywords
atomic force microscopy; misfit dislocation; nanostructures; transmission electron microscopy; molecular beam epitaxy; semiconducting materials
Issue Date
2003-01
Publisher
Journal of crystal growth
Citation
VOL 247, NO 3, 251-254
URI
http://pubs.kist.re.kr/handle/201004/9586
ISSN
0022-0248
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE