Dielectric cap disordering of GaAs/AlGaAs multi quantum well by using plasma enhanced chemical vapor deposited SiN capping layer.

Title
Dielectric cap disordering of GaAs/AlGaAs multi quantum well by using plasma enhanced chemical vapor deposited SiN capping layer.
Authors
강광남이정일김용N. ParkK. ChoW. J. Choi이석S. K. Kim박홍이
Keywords
quantum well disordering
Issue Date
1995-01
Publisher
J. mat. sci. lett.
Citation
v. 14, 1433-1435
URI
http://pubs.kist.re.kr/handle/201004/9650
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE