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dc.contributor.author강광남-
dc.contributor.author이정일-
dc.contributor.author김용-
dc.contributor.authorN. Park-
dc.contributor.authorK. Cho-
dc.contributor.authorW. J. Choi-
dc.contributor.author이석-
dc.contributor.authorS. K. Kim-
dc.contributor.author박홍이-
dc.date.accessioned2015-12-02T03:28:08Z-
dc.date.available2015-12-02T03:28:08Z-
dc.date.issued199501-
dc.identifier.citationv. 14, 1433-1435-
dc.identifier.other4524-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/9650-
dc.publisherJ. mat. sci. lett.-
dc.subjectquantum well disordering-
dc.titleDielectric cap disordering of GaAs/AlGaAs multi quantum well by using plasma enhanced chemical vapor deposited SiN capping layer.-
dc.typeArticle-
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