Two-temperature technique for plasma-enhanced chemical vapour deposition growth of silicon-nitride on InP.

Title
Two-temperature technique for plasma-enhanced chemical vapour deposition growth of silicon-nitride on InP.
Authors
강광남이정일한일기J. HerH. LimC. H. KimJ. E. KimH. Y. Park
Keywords
silicon-nitride on InP
Issue Date
1994-01
Publisher
Journal of materials science letters
Citation
v. 13, 898-?
URI
http://pubs.kist.re.kr/handle/201004/9651
Appears in Collections:
KIST Publication > Article
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