Carbon doping characteristics of GaAs and Al//0//.//3Ga//0//.//7As using CCl//4 grown by atmospheric pressure MOCVD.

Title
Carbon doping characteristics of GaAs and Al//0//.//3Ga//0//.//7As using CCl//4 grown by atmospheric pressure MOCVD.
Authors
손창식김성일김용이민석김무성민석기곽명현마동성
Keywords
carbon; doping; CCl//4; MOCVD
Issue Date
1993-01
Publisher
Bulletin of the Korean physical society
Citation
v. 11, no. 2, 342-?
URI
http://pubs.kist.re.kr/handle/201004/9671
Appears in Collections:
KIST Publication > Conference Paper
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