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Showing results 1 to 6 of 6

Issue DateTitleAuthor(s)
-Comparison of thin film properties of WN diffusion barrier prepared by atomic layer deposition using metal organic and metal halide reactant gasesYeonghyeon Hwang; Won-Ju Cho; Kim, Yong Tae
1998-03Effects of nitrogen ion implantation on the thermal stability of tungsten thin filmsKim, YT; Kwon, CS; Kim, DJ; Park, JW; Lee, CW
-Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu InterconnectsKim, Yong Tae; Lee Eui-Bok; Kim, Young-Hwan; KIM, CHUN KEUN; Byeong Kwon
1999-05N2+ implantation approaches for improving thermal stability of Cu/Mo/Si contact structureKim, Y.T.; Kim, D.J.; Park, J.-W.
1995-01Plasma deposited amorphous tungsten nitride diffusion barrier for metal-organic chemical vapor deposited Cu metallizationKim, Yong Tae; Lee, Chang Woo
-Thermal stability of Cu/WN/Si nano via contact structuresYeong Hyeon Hwang; Won-Ju Cho; Kim, Young-Hwan; Kim, Yong Tae
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