Browsing byAuthor강광남

Jump to:
All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
  • Sort by:
  • In order:
  • Results/Page
  • Authors/Record:

Showing results 13 to 42 of 83

Issue DateTitleAuthor(s)
1995-12Carrier lifetimes in dielectric disordered GaAs/AlGaAs multiple quantum well with SiN capping layers.김용; 최원준; 이석; 우덕하; 김상국; 김선호; 이정일; 강광남; 추장희; 조규만; S. K. Yu; J. C. Seo; D. Kim
1992-01Clear observation of the 2DEG in InGaAs/InAlAs quantum well.강광남; 이정일; T. W. Kim; M. Jung; K. H. Yoo; G. Ihm; S. J. Lee; H. L. Park
1975-01Composition dependence of the transition temperatures of the binary mixtures of the Schiff base liquid crystals : MBBA/EBBA and MBBA/BBCA.강광남; 정원
1974-01Display device 에의 액정의 응용강광남; 정원
1993-01Effective g-factor enhancement in two-dimensional electron gas in GaAs/AlGaAs heterostructures in the quantum hall regime.강광남; 이정일; K. S. Kim; B. D. Choe; S. J. Lee; K. S. Lee
1991-01Effects of velocity saturation in the LDD region on the characteristics of short channel LDD MOSFETs.강광남; 이정일; 이명복; 윤경식; 임기영
1992-01Electrical subbands in a both-side-modulation-doped In//0//.//5//2Al//0//.//4//8As/In//0//.//6//5Ga//0//.//3//5As single quantum well.강광남; 이정일; T. W. Kim; K. S. Lee; K. H. Yoo; G. Ih
1991-01Electrical subbands in an In0.65Ga0.35As quantum well between In0.52Al0.48As and In0.53Ga0.47As potential barriers.강광남; 이정일; T. W. Kim; K. S. Lee; K. H. Yoo
1990-01Electron irradiation induced defects in GaAs - I. Simple intrinsic defects.강광남; 박해용; 임한조
1990-11Fabrication and characterization of miniature Si pressure sensor.강광남; 이정일; 이명복; 주병권; 김형곤; 오명환
1993-01Fabrication and characterization of silicon device for flow measurement (I)강광남; 이정일; 오명환; 김형곤; 주병권; 이명복
1987-01Fabrication of 1um gate GaAs MESFET and analysis of correlation between dc characteristics and channel parameters.강광남; 엄경숙; 이유종
1991-08Filling-up effect of micro-gap by interfacial oxide growing in SFB process강광남; 주병권; 이재옥; 김철주; 오명환; 차균현; 이명복
1991-01GaAs 기판상에 구성된 방향성 결합기를 이용한 진행파형 광변조기의 특성 최적화에 관한 연구 .강광남; 이정일; 최원준; 홍성철; 한일기
1988-01Hot-carrier-induced deradation in submicron MOS transistors.강광남; 최병진
1994-01Impurity free quantum well disordering by rapid thermal annealing (RTA) using plasma enhanced chemical vapor deposited (PECVD) SiN//x capping layer.강광남; 최원준; 이석; 김용; 김상국; 김회종; 우덕하; 조규만
1992-01In0.52Al0.48As 장벽사이에서의 In0.65GaO0.35As/In0.53Ga0.47As 양자우물에서의 부띠에너지와 파동함수의 결정강광남; 이정일; 김태환; 강승언; 이규석
1996-10Instability of anodically sulfur-treated InP.김은규; 민석기; 우덕하; 한일기; 이정일; 강광남; H. J. Kim; S. H. Kim; H. Lim; H. L. Park
1996-01Knowledge based automated boundary detection for quantifying of left ventricular function in low contrast angiographic images.전춘기; 권용무; 강광남; 이태원
1987-01Monolithic microwave integrated circuits 의 현황과 장래전망 .강광남
1989-01Negative photomagnetoconductivity in thin semiconductor films.강광남; S. Cristoloveanu
1983-01On the role of exact boundary conditions in phototransport phenomena : case of SI-GaAs.강광남; S. Cristoloveanu
1992-01PECVD 방법에 의해 제작된 SiNx/InP MIS 구조의 bias stress 에 의한 C-V 및 G-V 곡선의 변화 .강광남; 이정일; 이명복; 한일기; 이유종
1995-01Plasma effect in dielectric cap quantum well disordering using plasma enhanced chemical vapor deposited SiN capping layer.이석; W. J. Choi; J. Zhang; 김용; S. K. Kim; 이정일; 강광남; K. Cho
1990-01Reduction of transconductance in saturation region of short channel LDD NMOSFETs.강광남; 이명복; 이정일
1995-01Selective etching characteristics of ITO/semiconductor and ITO/BaTiO//3 structures by reactive ion etching.강광남; 이정일; 한일기; 이윤희; 김회종; 이석; 오명환; 김선호; 박홍이
1984-01Semi-insulating GaAs 의 재료 특성과 응용 .강광남
1991-01Simple model for gate-voltage dependent parasitic resistance in short channel lightly doped drain metal oxide semiconductor field effect transistors.강광남; 이정일; 이명복; S. Y. Lee; 윤경식
1993-03Simple Model for the Second Substrate Current Hump in Short-Channel LDD MOSFETsLEE, MYOUNG BOG; 이정일; 강광남; K. S. Yoon; K. Y. Lim; H. Lim
1993-01Simple Semi-Analytic Model for the Substrtate Current of Short Channel MOSFETs with Lightly Doped DrainsLEE, MYOUNG BOG; 이정일; 강광남; K. S. Yoon; K. Y. Lim; H. Lim

BROWSE