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Showing results 83 to 112 of 204

Issue DateTitleAuthor(s)
1993-01PECVD 법으로 형성한 W//6//7N//3//3/GaAs 구조의 열적 특성 .김용태; 민석기; 홍종성; 이세정; 이창우; 이종무
1994-01Performance of plasma deposited tungsten and tungsten nitride schottky contacts to GaAs.김용태; 이창우; 민석기
1994-01Performance of the plasma deposited tungsten nitride barrier to prevent the interdiffusion of Al and Si.이창우; 김용태; 이주천; Jeong Yong Lee; 민석기; 박영욱
1993-01Performance of the plasma deposited tungsten nitride diffusion barrier for Al and Au metallization.김용태; 이창우; 민석기
1990-12Photoinduced current transient spectroscopy (PICTS).김은규; 조훈영; 홍치유; 민석기; 이호섭; 강태원
1991-01Plasma enhanced chemical vapor deposition of low-resistive tungsten thin films.김용태; 민석기; 홍종성; 김충기
1996-04Post-growth annealing effects of low-temperature grown TiO//2 thin films on InP substrate by low-pressure metalorganic chemical vapor deposition.김은규; 민석기; 염상섭; 손맹호; 한영기; 왕채현
1996-04Postgrowth annealing effects of TiO//2 thin filmas grown on InP substrate at low-temperature by metal-organic chemical-va[pr deposition.김은규; 손맹호; 민석기; 한영기; 왕채현; 염상섭
1998-05Properties of wafer-fused In0.2Ga0.8As/GaAs and InP/GaAs heterointerfaces최창학; 황성민; 김용; 김은규; 민석기; 남산; 변재동
1995-06Role of Cr in a GaAs crystal for obtaining a semi-insulating property.박용주; 민석기; 박일우; 염태호; 조성호
1991-06Role of hydrogen atom on metastable defects in GaAs.김은규; 조훈영; 민석기; C. Lee
1987-12RTA 에 따른 HB-GaAs 에서의 midgap level 들에 관한 isothermal capacitance transient spectroscopy (ICTS) 연구 : EL2(I).김은규; 조훈영; 한철원; 김춘근; 민석기
1991-04RTA 에 의한 Si 내의 thermal donors 와 깊은 준위의 거동 .김은규; 조훈영; 김춘근; 민석기; 김현수; 심기대; 박만장
1995-03Scanning tunneling microscopy를 이용한 Nanometer 크기의 구조제작에 관한 연구김용; 김희진; 김무성; 민석기
1990-02Si 이온주입된 반절연성 GaAs:Cr 의 열처리에 따른 깊은 준위연구 .김은규; 조훈영; 홍치유; 민석기; 이호섭; 강태원
1991-08Si 과 Be 이온이 공동주입된 GaAs 에 대한 전기 및 광학적 특성연구 .김은규; 조훈영; 민석기; 이호섭; 강태원; 홍치유
1990-04Stress released layers formed by pulsed ruby laser annealing on GaAs-on-Si.김용; 김무성; KIM, EUN KYU; 김현수; 민석기; 이현우; 김재관; 이주천
1988-10Structural properties of GaAs grown on (100) Si substrates by MOCVD김용; 김무성; 김현수; 민석기
1993-01Study on the lateral island extension for growth-intersupted GaAs/Al0.3Ga0.7As single quantum wells grown by atmospheric-pressure metalorganic chemical vapor deposition김용; 김성일; 김무성; 민석기; 이민석; 김영덕
1995-01Surface properties and electrical behavior of GaAs treated with (NH//4)//2S//x solution.김성일; 민석기; 이주희; 김은규; 손맹호; 최원철; 최무용
1992-01Temperature dependence of photoluminescence for GaAs/AlGaAs single quantum well grown by MOCVD with and without growth-interuption.김성일; 민석기; 김용; 김무성; 엄경숙; 김영덕; 이민석
1993-01Temperature dependent PL characteristics of C-doped GaAs by LPMOCVD.김성일; 민석기; 김용; 김무성; 이민석
1995-01The carbon doping characteristics of GaAs epilayers grown on GaAs substrates with various crystal orientations.김성일; 민석기; 민병돈; 황성민; 김무성
1995-01The characteristics of nitrogen implanted tungsten film as a new diffusion barrier for metal organic chemical vapor deposited Cu metallization.김용태; 민석기; C. S. Kwon; I. H. Choi
1995-01The facet evolution analysis of GaAs/AlGaAs multilayers grown on GaAs substrates with various patterns using CCl//4.김성일; 민석기; 황성민; 민병돈; 김무성
1991-12The observation of striation in GaAs : Si single crystal grown by horizontal bridgman method.박용주; 박찬용; 박승철; 한철원; 민석기; 김기수
1993-01The properties of the quantum wires grown on V-grooved Al//0//.//3Ga//0//.//7As/GaAs substrate at atmospheric pressure metalorganic chemical vapor deposition.김성일; 김무성; 민석기; 이민석; 김용; 김영덕; 남산
1994-01The study of facet evolution of AlGaAs/GaAs and AlAs/GaAs multilayers on mesa-patterned GaAs substrate by MOCVD.김성일; 민석기; 김용; 김무성; 박양근; 이민석; 박영주
1994-01The temperature dependence of the electrical properties of carbon doped GaAs.김성일; 민석기; 김용; 김무성
1987-01Theoretical calculations on absorption, emission and gain spectra in AlGaAs active layer of the visible DH laser diode.김성일; 민석기; 엄경숙; 김무성

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