| 2000-05 | Dependence of the intermixing of an InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH₃ flow rate during the growth of a SiN//x capping layer | 최원준; 이희택; 우덕하; 김선호; 조재원 |
| - | Dependence of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH₃ flow rate for the growth of SiNx capping layer | Choi Won Jun; 이희택; Woo Deok Ha; Lee Seok; Kim Sun Ho; CHOI SANG SAM |
| 2000-09 | Effect of dielectric-semiconductor capping layer combinations on impurity free vacancy disordering of InGaAs/InGaAsP single quantum well structure | 이희택; 최원준; 우덕하; 김선호; 조재원 |
| - | Effect of dielectric-semiconductor capping layer combinations on impurity free vacancy disordering of InGaAs/InGaAsP single quantum well structure. | 이희택; Choi Won Jun; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM; 조재원 |
| - | Effect of dielectric-semiconductor capping layer combinations on the dielectric cap quantum well disordering of InGaAs/InGaAsP single quantum well structure | 이희택; Choi Won Jun; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM; 조재원; 이종창 |
| - | Impurity free vacancy disordering of an InGaAsP quantum-well structure by using SiN//x film prepared by plasma enhanced chemical vapor deposition | Choi Won Jun; 이희택; Woo Deok Ha; Kim Sun Ho |
| 2002-12 | 다양한 반도체-유전체 덮개층 조합을 이용한 InGaAs/InGaAsP 양자우물의 무질서화 | 조재원; 이희택; 최원준; 우덕하; 김선호; 강광남 |
| 2003-01-08 | 양자우물 구조를 갖는 반도체 광소자의 밴드갭 제저방법 | 최원준; 강광남; 이희택; 김선호; 우덕하; 이석; 한일기; 김회종 |
| 2002-02-19 | 양자우물 무질서화 기술에서 유전체－반도체 덮개층 조합에 의한 InGaAs/InGaAsP양자우물 밴드갭의 조작방법 | 최원준; 강광남; 김선호; 이희택; 이석; 한일기; 김회종; 우덕하 |
| - | (Undefined) | Choi Won Jun; 이희택; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM; 조재원 |
