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Showing results 3 to 10 of 10

Issue DateTitleAuthor(s)
-Effect of Al composition on luminescence properties of Eu-doped AlGaNAkira Yoshida; Akihiro Wakahara; Yasuo Nakanishi; Hiroshi Okada; Takeshi Ohshima; Hisayoshi Itoh; Kim, Yong Tae
-Effects of Eu implantation on red light emission of group III-nitridesKim, Seong Il; Kim, Yong Tae; Akihiro Wakahara; Akira Yoshida
-Fabrication and characterization of rare-earth doped AlGaN for light source application of bio-MEMSAkihiro Wakahara; Tetsuya Fujiwara; Yasuo Hakanishi; Hiroshi Okada; Akira Yoshida; Takeshi Ohshima; Tomihiro Kamiya; Kim, Yong Tae
-High luminescence efficiency of Eu-doped GaNKim, Seong Il; Ji-Ho Park; Akihiro Wakahara; Kim, Yong Tae
-High luminescence efficiency of Eu-Doped GaNKim, Yong Tae; Park, Ji-Ho; Akihiro Wakahara
-In situ transmission electron microscopy study on the nucleation and grain growth of Ge2Sb2Te5 thin filmsKim, Yong Tae; Park Yu Jin; Lee Jeong Yong; Kim, Seong Il; Kim, Young Hwan; Akihiro Wakahara
-Stress evolution and diffusion barrier performance of La0.67Sr0.33MnO3 (LSMO)/WCN/Si structureChang Woo Lee; Kim, Yong Tae; Akihiro Wakahara; KIM Hee Joon
-Surface energy and equilibrium shape of hexagonal structured Ge2Sb2Te5 grainKim, Yong Tae; Park Yu Jin; Youm Min Soo; Akihiro Wakahara
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