2014-09 | A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View | 석준영; Seul Ji Song; Jung Ho Yoon; Kyung Jean Yoon; Tae Hyung Park; Dae Eun Kwon; 임형광; Gun Hwan Kim; 정두석; Cheol Seong Hwang |
2013-07 | A Study on the Scalability of a Selector Device Using Threshold Switching in Pt/GeSe/Pt | 안형우; 정두석; 정병기; 김수동; 신상열; 임형광; 김동환; 이수연 |
2016-09 | Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours | 박종극; 김인호; 정두석; 임형광; 블라디미르; 김구현; 김도헌; Rohit Soni; Cheol Seong Hwang |
2011-03 | Dc current transport behavior in amorphous GeSe films | 정두석; 박군호; 임형광; 황철성; 이수연; 정병기 |
2013-07 | Elastic resistance change and action potential generation of non-faradaic Pt/TiO2/Pt capacitors | 임형광; 장호원; 이도권; 김인호; 황철성; 정두석 |
2015-01 | Electric-field-induced Shift in the Threshold Voltage in LaAlO3/SrTiO3 Heterostructures | 김성근; 김신익; 임형광; 정두석; 권범진; 백승협; 김진상 |
2016-05 | Leaky Integrate-and-Fire Neuron Circuit Based on Floating-Gate Integrator | 김인호; 정두석; 김성근; 임형광; 블라디미르; 김구현; 석준영; Byung Joon Choi |
2014-12 | Multiprotocol-induced plasticity in artificial synapses | 블라디미르; Omid Kavehei; 임형광; 석준영; 김성근; 김인호; 이욱성; Byung Joon Choi; 정두석 |
2016-05 | Relaxation oscillator-realized artificial electronic
neurons, their responses, and noise | 김인호; 정두석; 임형광; 블라디미르; 김구현; Hyung-Woo Ahn; Jun Yeong Seok; Cheol Seong Hwang |
2015-05 | Reliability of neuronal information conveyed by unreliable neuristorbased leaky integrate-and-fire neurons: a model study | 임형광; 블라디미르; 석준영; 김성근; 김인호; 황철성; 정두석 |
2017-12 | Scalable excitatory synaptic circuit design using floating gate based leaky integrators | 이욱성; 박종극; 김인호; 최정혜; 정두석; 임형광; 블라디미르; 최병준 |
2013-09 | Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold | 임형광; 김인호; 김진상; 황철성; 정두석 |
2012-05 | Threshold resistive and capacitive switching behavior in binary amorphous GeSe | 정두석; 임형광; 박군호; 황철성; 이수연; 정병기 |