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Showing results 1 to 7 of 7

Issue DateTitleAuthor(s)
-Current-induced magnetization switching in MgO magnetic tunnel junctions with uncompensated CoFeB/Ru/CoFeB synthetic free layersLee Tae Young; Chiyui Ahn; Min, Byoung Chul; Shin, Kyung Ho; 정보람; 장수영; Lim Sang Ho; J. Langer; B. Ocker; W. Maass; 박승영; 조영훈
-MgO magnetic tunnel junctions with a synthetic free layer consisting of CoFeB/Ru/ perpendicular magnetLee Yeon Sub; Min, Byoung Chul; Choi Gyung Min; J. Langer; B. Ocker; W. Maass; 김영근; Shin, Kyung Ho
-MgO magnetic tunnel junctions with a synthetic free layer consisting of CoFeB/Ru/perpendicular magnetLee Yeon Sub; Min, Byoung Chul; Choi Gyung Min; J. Langer; B. Ocker; W. Maass; Y. Kim; Shin, Kyung Ho
-MgO-based magnetic tunnel junctions with CoFeB/Ru/ ferromagnet synthetic free layersMin Byoung Chul; shin il jae; Choi Gyung Min; J. Langer; B. Ocker; Shin, Kyung Ho
-MgO-based MTJs with synthetic free layersMin Byoung Chul; shin il jae; Lee Jung Hoon; J. Langer; J. Wrona; B. Ocker; Shin, Kyung Ho
-Oscillatory tunnel magenetoresistance in MgO magnetic tunnel junctions with a synthetic free layerMin Byoung Chul; shin il jae; Lee Jung Hoon; Shin, Kyung Ho; J. Langer; J. Wrona; B. Ocker; K. J. Lee; H. W. Lee
-Sign reversal of magnetoresistance by crystal-structure transition in MgO magnetic tunnel junctionsMin Byoung Chul; shin il jae; Lee Jung Hoon; J. Langer; B. Ocker; W. Maass; 이경진; Shin, Kyung Ho
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