| - | Effect of excess bismuth on ferroelectric properties of Bi4-xNdxTi3O12 thin films | Young Mi Kim; KIM IK SOO; In-Hoon Choi; Kim Woo Sik; Kim, Yong Tae; Kim, Young Hwan |
| - | ELECTRICAL CHARACTERISTICS OF LOW-TEMPERATURE CRYSTALLIZED SrBi2Nb2O9 THIN FILMS FOR FET TYPE FERAM | Kim, Yong Tae; KIM IK SOO; Youm Minsoo; Sung Man Young |
| - | Enhancement of ferroelectric properties of SrBi2Nb2O9 thin films by oxygen plasma rapid thermal annealing | KIM IK SOO; Young Mi Kim; Kim, Yong Tae; Kim, Seong Il; In-Hoon Choi |
| - | Etch stop Process of SrBi2Ta2O9 thin film using CeO2 buffer layer for self aligned ferroelectric gate structure | Kwon Young Suk; SHIN, SUN IL; KIM IK SOO; Kim, Seong Il; Kim, Yong Tae; In-Hoon Choi |
| - | Identification of Hydrogen Induced Atomic Deformation in SrBi2Nb2O9 Thin Film | KIM IK SOO; In-Hoon Choi; Kim, Yong Tae; Kim, Young Hwan; Dong Chul Yoo; Jeong Yong Lee |
| - | Identification of hydrogen-induced changes in atomic deformation of ferroelectric SrBi2Nb2O9 thin film using transmission electron microscopy | Kim, Yong Tae; KIM IK SOO; Kim, Seong Il; Dong Chul Yoo; In-Hoon Choi |
| - | Multibit operation of MFISFET with Pt/SrBi2Ta2O9/Y2O3/Si gate structure | SHIN, SUN IL; Kwon Young Suk; KIM IK SOO; Kim, Seong Il; Kim, Yong Tae; Jeong Ho Park |
| - | Single transistor type ferroelectric memory with Pt/SrBi2Ta2O9/Pt/CeO2/Si MFMIS gate structure | SHIN, SUN IL; Kwon Young Suk; KIM IK SOO; Kim, Seong Il; Kim, Yong Tae; Jeong Ho Park |
| - | Sol-gel derived Bi4-xNdxTi3O12 Bi-layered perovskite ferroelectric thin films | KIM IK SOO; Young Mi Kim; In-Hoon Choi; Woo Sik Kim; SHIN, SUN IL; Kim, Yong Tae; Kim, Young Hwan |
| - | Sol-gel derived Nd-substitutied Bi4Ti3O12 thin film and its electrical properties | Kim, Young Hwan; Kim, Yong Tae; KIM IK SOO; Young Mi Kim; In-Hoon Choi |
| - | (Undefined) | Kim, Yong Tae; Kim, Seong Il; 염민수; KIM IK SOO |
| - | (Undefined) | Jung, Sung Mok; KIM IK SOO; Kim, Young Hwan; 홍석경; 유상임; Kim, Yong Tae |
