Browsing byAuthorKim, Sang-Hyeon

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Showing results 1 to 16 of 16

Issue DateTitleAuthor(s)
2022-04An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping ModeKuk, Song-Hyeon; Han, Seung-Min; Kim, Bong Ho; Baek, Seung-Hyub; Han, Jae-Hoon; Kim, Sang-Hyeon
2019-11Epitaxial Lift-Off Technology for Large Size III-V-on-Insulator SubstrateLee, Subin; Kim, Seong Kwang; Han, Jae-Hoon; Song, Jin Dong; Jun, Dong-Hwan; Kim, Sang-Hyeon
2023-08Examination of Ferroelectric FET for "Cold" Nonvolatile MemoryKuk, Song-Hyeon; Han, Seung-Min; Kim, Bong Ho; Kim, Joon Pyo; Kim, Seong-Kwang; Ahn, Seung-Yeop; Park, Min Hyuk; Han, Jae-Hoon; Kim, Sang-Hyeon
2024-05Heavily Doped Channel Carrier Mobility in β-Ga2O3 Lateral Accumulation MOSFETKuk, Song-Hyeon; Choi, Seongjun; Kim, Hyeong Yun; Ko, Kyul; Jeong, Jaeyong; Geum, Dae-Myeong; Han, Jae-Hoon; Park, Ji-Hyeon; Jeon, Dae-Woo; Kim, Sang-Hyeon
2018-05Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III-V and Ge MaterialsKim, Sang-Hyeon; Kim, Seong-Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Ju, Gunwu; Kim, Han-Sung; Lim, Hee-Jeong; Lim, Hyeong-Rak; Han, Jae-Hoon; Lee, Subin; Kim, Ho-Sung; Bidenko, Pavlo; Kang, Chang-Mo; Lee, Dong-Seon; Song, Jin-Dong; Choi, Won Jun; Kim, Hyung-Jun
2021-01High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSbKim, Sang-Hyeon; Roh, Ilpyo; Han, Jae-Hoon; Geum, Dae-Myeong; Kim, Seong Kwang; Kang, Soo Seok; Kang, Hang-Kyu; Lee, Woo Chul; Kim, Seong Keun; Hwang, Do Kyung; Song, Yun Heub; Song, Jin Dong
2014-05High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and V-th TunabilityKim, Sang-Hyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi
2015-06III-V/Ge channel MOS device technologies in nano CMOS eraTakagi, Shinichi; Zhang, Rui; Suh, Junkyo; Kim, Sang-Hyeon; Yokoyama, Masafumi; Nishi, Koichi; Takenaka, Mitsuru
2023-01Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall PolarizationKuk, Song-Hyeon; Han, Seungmin; Lee, Dong Hyun; Kim, Bong Ho; Shim, Joonsup; Park, Min Hyuk; Han, Jae-Hoon; Kim, Sang-Hyeon
2018-03Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III-V TemplatesShim, Jae-Phil; Kim, Han-Sung; Ju, Gunwu; Lim, Hyeong-Rak; Kim, Seong Kwang; Han, Jae-Hoon; Kim, Hyung-Jun; Kim, Sang-Hyeon
2023-06Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films전지훈; Kuk, Song-Hyeon; 조아진; Baek, Seung-Hyub; Kim, Sang-Hyeon; Kim, Seong Keun
2020-03Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs Using Sequential Fabrication ProcessGeum, Dae-Myeong; Kim, Seong Kwang; Lee, Subin; Lim, Donghwan; Kim, Hyung-Jun; Choi, Chang Hwan; Kim, Sang-Hyeon
2020-04Photo-Responsible Synapse Using Ge Synaptic Transistors and GaAs PhotodetectorsKim, Seong Kwang; Geum, Dae-Myeong; Lim, Hyeong-Rak; Han, JaeHoon; Kim, Hyungjun; Jeong, YeonJoo; Kim, Sang-Hyeon
2023-05Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NANDKuk, Song-Hyeon; Han, Jae-Hoon; Kim, Bong Ho; Kim, Junpyo; Kim, Sang-Hyeon
2018-08Simulation Study on the Design of Sub-kT/q Non-hysteretic Negative Capacitance FET Using Capacitance MatchingBidenko, Pavlo; Lee, Subin; Han, Jae-Hoon; Song, Jin Dong; Kim, Sang-Hyeon
2023-06-11Strategy for 3D Ferroelectric Transistor: Critical Surface Orientation Dependence of HfZrOx on SiKuk, Song-Hyeon; Han, Jae Hoon; Han, Jae-Hoon; Kim, Bong Ho; Kim, Joon Pyo; Kim, Sang-Hyeon

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