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Showing results 1 to 5 of 5

Issue DateTitleAuthor(s)
-Fabrication of Ultra-low Dit(E) InGaAs MOSFETsKim Seong Kwang; Shim Jae Phil; Geum Daemyeong; Chang Zoo Kim; KIM HANSUNG; SONG, JIN-DONG; Sung-Jin Choi; Dae Hwan Kim; Choi, Won Jun; Kim Hyung-jun; Dong Myong Kim; Sanghyeon Kim
-Impact of Ground Plane Doping on InGaAs-OI MOSFETsKim Seong Kwang; Shim Jae Phil; Geum Daemyeong; 김재원; 김창주; KIM HANSUNG; SONG, JIN-DONG; 최성진; 김대환; Choi, Won Jun; Kim Hyung-jun; 김동명; Sanghyeon Kim
-Improvement on interfacial quality of Ge MOS Capacitor using RIE O2 plasma treatmentHyeong rak Lim; Kim Seong Kwang; Jae-Hoon Han; Shim Jae Phil; Subin Lee; Kim Hyung-jun; Byeong-Kwon Ju; Sanghyeon Kim
-Thin body n- and p-GaAs FET on Si for CMOS integrationShim Jae Phil; Ju, Gunwu; kim seong kwang; KIM HANSUNG; Sanghyeon Kim; Kim Hyung-jun
-Ultra-Thin Body Ge(110)-OI on Si fabrication from Ge/AlAs/GaAs Substrate via wafer bonding technologyShim Jae Phil; KIM HANSUNG; Ju, Gunwu; Hyeong rak Lim; Kim Seong Kwang; Jae-Hoon Han; Sanghyeon Kim; Kim Hyung-jun
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