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Showing results 1 to 13 of 13

Issue DateTitleAuthor(s)
2011-05-15Anomalous strain profiles and electronic structures of a GaAs-capped InAs/In0.53Ga0.47As quantum ringMoon, Pilkyung; Choi, Won Jun; Park, Kwangmin; Yoon, Euijoon; Lee, JaeDong
2013-05-01Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescenceYang, Changjae; Lee, Sangsoo; Shin, Keun-Wook; Oh, Sewoung; Moon, Daeyoung; Kim, Sung-Dae; Kim, Young-Woon; Kim, Chang-Zoo; Park, Won-kyu; Choi, Won Jun; Park, Jinsub; Yoon, Euijoon
2010-09-01Competitive growth mechanisms of InAs quantum dots on InxGa1 (-) As-x layer during post growth interruptionYang, Changjae; Kim, Jungsub; Sim, Uk; Lee, Jaeyel; Choi, Won Jun; Yoon, Euijoon
2018-02Flaw-Containing Alumina Hollow Nanostructures Have Ultrahigh Fracture Strength To Be Incorporated into High-Efficiency GaN Light-Emitting DiodesKang, Sung-gyu; Moon, Daeyoung; Jang, Jeonghwan; Kim, Ju-Young; Suh, Jin-Yoo; Yoon, Euijoon; Han, Heung Nam; Choi, In-suk
2011-08-29Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristicsYang, Changjae; Lee, Sangsoo; Shin, Keun Wook; Oh, Sewoung; Park, Jinsub; Kim, Chang-Zoo; Park, Won-Kyu; Ha, Seung-Kyu; Choi, Won Jun; Yoon, Euijoon
2017-04Heterogeneously integrated high-performance GaAs single-junction solar cells on copperGeum, Dae-Myeong; Park, Min-Su; Kim, SangHyeon; Choi, Won Jun; Kim, Chang Zoo; Yoon, Euijoon
2008-03-18Indium nanowires synthesized at an ultrafast rateOh, Seung Soo; Kim, Do Hyun; Moon, Myonng-Woon; Vaziri, Ashkan; Kim, Miyoung; Yoon, Euijoon; Oh, Kyu Hwan; Hutchinson, John W.
2013-11-13Less strained and more efficient GaN light-emitting diodes with embedded silica hollow nanospheresKim, Jonghak; Woo, Heeje; Joo, Kisu; Tae, Sungwon; Park, Jinsub; Moon, Daeyoung; Park, Sung Hyun; Jang, Junghwan; Cho, Yigil; Park, Jucheol; Yuh, Hwankuk; Lee, Gun-Do; Choi, In-Suk; Nanishi, Yasushi; Han, Heung Nam; Char, Kookheon; Yoon, Euijoon
2019-06Monolithic integration of GaAs//InGaAs photodetectors for multicolor detectionGeum, Dae-Myeong; Kim, SangHyeon; Kim, SeongKwang; Yoon, Euijoon; Kylun, JiHoon; Song, Jindong; Choi, Won Jun; Kang, SooSeok
2019-12Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systemsGeum, Dae-Myeong; Kim, SangHyeon; Kim, Seong Kwang; Kang, SooSeok; Kyhm, JiHoon; Song, Jindong; Choi, Won Jun; Yoon, Euijoon
2018-03-05Room temperature operation of mid-infrared InAs0.81Sb0.19 based photovoltaic detectors with an In0.2Al0.8Sb barrier layer grown on GaAs substratesGeum, Dae-Myeong; Kim, SangHyeon; Kang, SooSeok; Kim, Hosung; Park, Hwanyeol; Rho, Il Pyo; Ahn, Seung Yeop; Song, Jindong; Choi, Won Jun; Yoon, Euijoon
2016-02-11Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic ApplicationsGeum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, SangHyeon; Choi, Won Jun
2021-05-01Wide-temperature (up to 100 degrees C) operation of thermostable vanadium oxide based microbolometers with Ti/MgF2 infrared absorbing layer for long wavelength infrared (LWIR) detectionLee, Hye Jin; Wang, Dasom; Kim, Tae Hyeong; Jung, Dae-Han; Kil, Tae-Hyeon; Lee, Ki-Suk; Choi, Hyung-Jin; Baek, Seung-Hyub; Yoon, Euijoon; Choi, Won Jun; Baik, Jeong Min
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