Chong Eu Gene Jo Kyoungchul Kim Seung Han Chun Yoon Soo Lee Sang Yeol 2024-01-13T00:06:10Z 2024-01-13T00:06:10Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/100177 English oxygen partial pressure hafnium-doped indium zinc oxide bias-stability Hf Improvement of bias stability of indium zinc oxide TFTs by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering Conference 1 APCPST 2010 APCPST 2010 KO