Oh Juhyun Chun Daehwan Lee Eui-Bok Kim, Young-Hwan KIM, CHUN KEUN Byeong Kwon Ju Man Young Sung Kim, Yong Tae 2024-01-13T00:06:22Z 2024-01-13T00:06:22Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/100192 English Trench IGBT Breakdown voltage Electric field distribution A design of Novel IGBT with Oblique Trench Gate Conference 1 2010 Asia-Pacific Workshop on fundamentals and Applications of Advanced Semiconductor Devices, v.110, no.110, pp.57 - 59 2010 Asia-Pacific Workshop on fundamentals and Applications of Advanced Semiconductor Devices 110 110 57 59 JA