Park Young-wook Lee Hyun Seok Hyung-Woo Ahn Wu Zhe Lee Suyoun Jeung-hyun Jeong Jeong, Doo Seok Kyung-woo Yi CHEONG, BYUNG KI 2024-01-13T00:31:29Z 2024-01-13T00:31:29Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/100387 English chalcogenide GST PRAM The Effect of Ge Addition on the Operation Characteristics of a Phase-change Memory(PCM) Device Using Ge-doped SbTe Conference 1 Materials Research Society Materials Research Society US