Jo Kyoungchul Seongpil Chang Chong Eugene Byeong-kwon Ju Lee Sang Yeol 2024-01-13T00:32:51Z 2024-01-13T00:32:51Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/100486 English Origin of hysteresis of a-IGZO transistor with Al2O3/HfO2/Al2O3 gate insulator Conference 1 ICAMD 2009 ICAMD 2009 KO