Lee Suyoun Jeung-hyun Jeong Park Young-wook Wu Zhe LEE, TAEK SUNG CHEONG, BYUNG KI 2024-01-13T03:02:13Z 2024-01-13T03:02:13Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/101774 English phase change memory reliability field-induced ion migration electromigration Degradation Mechanism and Curing Method of Phase Change Memory (PCM) Device Characteristics during Cyclic Programming 상변화메모리의 쓰기/지우기 반복에 따른 열화현상의 원인에 대한 연구 Conference 1 Proceedings of European Phase Change and Ovonic Symposium, pp.188 - 193 Proceedings of European Phase Change and Ovonic Symposium 188 193 XR