Dae-Hwan Kang Kim Inho Jeung-hyun Jeong CHEONG, BYUNG KI Dong-Ho Ahn Ki-Bum Kim 2024-01-13T07:32:09Z 2024-01-13T07:32:09Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/104170 English Enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode Conference 1 2006 NVSMW (Non-Volatile Semiconducting Memory Workshop) 2006 NVSMW (Non-Volatile Semiconducting Memory Workshop) US