Kim, Yong Tae Kim, Seong Il YOUM MINSOO Chang Woo Lee Man Young Sung 2024-01-13T08:33:35Z 2024-01-13T08:33:35Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/104801 English memory phase change Ge2Sb2Te5 metastable FCC scaling contact area PRAM Effects of metastable crystallization of Ge2Sb2Te5 thin films and scaled contact dimension on phase change random access memory Conference 1 The International Conference on Electrical Engineering 2005 (ICEE2005) The International Conference on Electrical Engineering 2005 (ICEE2005) CC