Sun Il Shim Young Suk Kwon Kim, Seong Il Kim, Yong Tae Ho Jung Chang Jung Ho Park 2024-01-13T11:01:03Z 2024-01-13T11:01:03Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/105958 English Etching characteristics of SrBi2Ta2O9(SBT) and CeO2 layers by using the inductively coupled plasma reactive ion etching (ICP RIE) process and fabrication of metal ferroelectric insulator semiconductor field effect transistor (MFISFET) Conference 1 The 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Mate, pp.164 The 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Mate 164 164 KO