Junggeun Jhin Jaekyun Kim Mingu Kang Dongjin Byun Park Young Ju Eui Kwan Koh 2024-01-13T12:04:20Z 2024-01-13T12:04:20Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/106701 English The postannealing effects of GaN epilayer grown on N-ion implanted sapphire substrate Conference 2 The 11th Seoul International Symposium on the Physics of Semiconductors and Applications-2002, pp.282 The 11th Seoul International Symposium on the Physics of Semiconductors and Applications-2002 282 282 KO