B.H.Choi S.H.Son K.H.Cho S.W.Hwang D.Ahn Y.M.Park Park Young Ju E.K.Kim 2024-01-13T12:31:05Z 2024-01-13T12:31:05Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/106758 English Single electron tunneling effects in a heavily doped n+ GaAs quantum dot Conference 1 26th International conference on physcis of semiconductor, pp.247 26th International conference on physcis of semiconductor 247 247 UK