Kim Yong Tae 심현상 2024-01-13T12:31:47Z 2024-01-13T12:31:47Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/106802 English 구리배선 펄스플라즈마 원자층 증착 텅스텐질화막 초고집적소자 W-N 확산방지막 Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect. 구리배선을 위한 펄스플라즈마 원자층박막증착방법에 의한 텅스텐질화 확산방지막의 특성 Conference 1 2002 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2, pp.115 - 118 2002 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2 115 118 JA