김익수 최재형 Kim, Yong Tae 최인훈 2024-01-13T15:30:40Z 2024-01-13T15:30:40Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/108317 English YMnO3 ferroelectric gate memory window Achievment of high memory window of YMnO3/Si gate by thermal treatment in nitrogen ambient Conference 1 12th IEEE International Symposium on Applications of Ferroelectrics, pp.47 12th IEEE International Symposium on Applications of Ferroelectrics 47 47 US