고의관 Park Young Ju KIM EUN KYU PARK CHAN-SOO 이석현 이정희 조성호 2024-01-13T16:31:25Z 2024-01-13T16:31:25Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/108912 English GaN A study of GaN characteristics affected by stress existing in N+-implanted Si(111) substrate Conference 2 Proc. 7th Korean Conf. on Semiconductors = 제 7 회 한국반도체 학술대회, pp.507 - 508 Proc. 7th Korean Conf. on Semiconductors = 제 7 회 한국반도체 학술대회 507 508 KO