김주성 Byun Dongjin KIM JIN SANG Kum Dong Wha 2024-01-13T19:02:23Z 2024-01-13T19:02:23Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/110305 English MOCVD MOCVD growth of GaN on sapphire substrate using N-atom source based on a dielectric barrier discharge method Conference 2 Abst. the 9th Seoul international symposium on the physics of semiconductors and applications (ISPSA, pp.104 Abst. the 9th Seoul international symposium on the physics of semiconductors and applications (ISPSA 104 104 KO