Choi Won Jun 한상민 S.I. Shah CHOI SUKGEUN Woo Deok Ha Lee Seok KIM HWE JONG Han Il Ki Lee Jung Il KANG KWANG NHAM 조재원 2024-01-13T19:31:37Z 2024-01-13T19:31:37Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/110528 English Quantum well disordering Hydogen content in capping layer Photonic Interated circuit Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing low hydrogen content SiN//x capping layer for dielectric cap quantum well disordering Conference 1 Materials Research Society Symposium, v.484, pp.419 - 424 Materials Research Society Symposium 484 419 424 US 000073983400057