한철구 김광무 정석구 최범호 KIM EUN KYU Min Suk-Ki PARK JEONG HO 2024-01-13T20:04:01Z 2024-01-13T20:04:01Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/110936 English in-plane gated transistor electron beam lithography HEMT MBE Fabrication of in-plane gated transistor with electron-beam lighography technique Conference 2 Proc. 4th Korean conf. semiconductors., pp.437 - 438 Proc. 4th Korean conf. semiconductors. 437 438 KO