Kim, Jihyun Rhee, Dongjoon Jung, Myeongjin Cheon, Gang Jin Kim, Kangsan Kim, Jae Hyung Park, Ji Yun Yoon, Jiyong Lim, Dong Un Cho, Jeong Ho Kim, In Soo Son, Donghee Jariwala, Deep Kang, Joohoon 2024-01-19T08:00:43Z 2024-01-19T08:00:43Z 2024-01-18 2024-01 1936-0851 https://pubs.kist.re.kr/handle/201004/112950 The significance of metal-semiconductor interfaces and their impact on electronic device performance have gained increasing attention, with a particular focus on investigating the contact metal. However, another avenue of exploration involves substituting the contact metal at the metal-semiconductor interface of field-effect transistors with semiconducting layers to introduce additional functionalities to the devices. Here, a scalable approach for fabricating metal-oxide-semiconductor (channel)-semiconductor (interfacial layer) field-effect transistors is proposed by utilizing solution-processed semiconductors, specifically semiconducting single-walled carbon nanotubes and molybdenum disulfide, as the channel and interfacial semiconducting layers, respectively. The work function of the interfacial MoS2 is modulated by controlling the sulfur vacancy concentration through chemical treatment, which results in distinctive energy band alignments within a single device configuration. The resulting band alignments lead to multiple functionalities, including multivalued transistor characteristics and multibit nonvolatile memory (NVM) behavior. Moreover, leveraging the stable NVM properties, we demonstrate artificial synaptic devices with 88.9% accuracy of MNIST image recognition. English American Chemical Society Defect-Engineered Semiconducting van der Waals Thin Film at Metal-Semiconductor Interface of Field-Effect Transistors Article 10.1021/acsnano.3c10453 1 ACS Nano, v.18, no.1, pp.1073 - 1083 ACS Nano 18 1 1073 1083 N scie scopus 001139439500001 2-s2.0-85181046733 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article nonvolatile memory van der Waals heterostructure solution processing interface defect engineering multivaluedtransistor