Yan, Shaohua He, Hui-Hui Fu, Yang Zhao, Ning-Ning Tian, Shangjie Yin, Qiangwei Meng, Fanyu Cao, Xinyu Wang, Le Chen, Shanshan Son, Ki-Hoon Choi, Jun Woo Ryu, Hyejin Wang, Shouguo Lei, Hechang Liu, Kai Zhang, Xiao 2024-01-19T08:00:48Z 2024-01-19T08:00:48Z 2024-01-18 2024-01 2040-3364 https://pubs.kist.re.kr/handle/201004/112954 Itinerant ferromagnetism at room temperature is a key factor for spin transport and manipulation. Here, we report the realization of near-room temperature itinerant ferromagnetism in Co doped Fe4CoGeTe2 thin flakes. The ferromagnetic transition temperature T-C (similar to 323 K-337 K) is almost unchanged when the thickness is as low as 12 nm and is still about 284 K at 2 nm (bilayer thickness). Theoretical calculations further indicate that the ferromagnetism persists in monolayer Fe4CoGeTe2. In addition to the robust ferromagnetism down to the ultrathin limit, Fe4CoGeTe2 exhibits an unusual temperature- and thickness-dependent intrinsic anomalous Hall effect. We propose that it could be ascribed to the dependence of the band structure on thickness that changes the Berry curvature near the Fermi energy level subtly. The near-room temperature ferromagnetism and tunable anomalous Hall effect in atomically thin Fe4CoGeTe2 provide opportunities to understand the exotic transport properties of two-dimensional van der Waals magnetic materials and explore their potential applications in spintronics. English Royal Society of Chemistry Near-room temperature ferromagnetism and a tunable anomalous Hall effect in atomically thin Fe4CoGeTe2 Article 10.1039/d3nr03594h 1 Nanoscale, v.16, no.3, pp.1406 - 1414 Nanoscale 16 3 1406 1414 N scie scopus 001134888000001 2-s2.0-85181477544 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Chemistry Science & Technology - Other Topics Materials Science Physics Article; Early Access