Choi, Sanghyeon Moon, Taehwan Wang, Gunuk Yang, J. Joshua 2024-01-19T08:02:27Z 2024-01-19T08:02:27Z 2024-01-04 2023-12 2196-5404 https://pubs.kist.re.kr/handle/201004/113017 Memristors have attracted increasing attention due to their tremendous potential to accelerate data-centric computing systems. The dynamic reconfiguration of memristive devices in response to external electrical stimuli can provide highly desirable novel functionalities for computing applications when compared with conventional complementary-metal-oxide-semiconductor (CMOS)-based devices. Those most intensively studied and extensively reviewed memristors in the literature so far have been filamentary type memristors, which typically exhibit a relatively large variability from device to device and from switching cycle to cycle. On the other hand, filament-free switching memristors have shown a better uniformity and attractive dynamical properties, which can enable a variety of new computing paradigms but have rarely been reviewed. In this article, a wide range of filament-free switching memristors and their corresponding computing applications are reviewed. Various junction structures, switching properties, and switching principles of filament-free memristors are surveyed and discussed. Furthermore, we introduce recent advances in different computing schemes and their demonstrations based on non-filamentary memristors. This Review aims to present valuable insights and guidelines regarding the key computational primitives and implementations enabled by these filament-free switching memristors. English Springer | Korea Nano Technology Research Society Filament-free memristors for computing Article 10.1186/s40580-023-00407-0 1 Nano Convergence, v.10, no.1 Nano Convergence 10 1 Y scie scopus kci 001126319900001 2-s2.0-85179946942 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Review RESISTIVE MEMORY MOTT TRANSITION DEVICES BEHAVIOR FUTURE FERROELECTRIC TUNNEL-JUNCTIONS LOW-POWER CONCENTRATION POLARIZATION SYNAPTIC PLASTICITY DYNAMIC MEMRISTOR