Lee, Jaewook Yang, Kun Kwon, Ju Young Kim, Ji Eun Han, Dong In Lee, Dong Hyun Yoon, Jung Ho Park, Min Hyuk 2024-01-19T08:02:56Z 2024-01-19T08:02:56Z 2023-12-21 2023-12 2196-5404 https://pubs.kist.re.kr/handle/201004/113037 HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such as atomic layer deposition. Oxygen vacancy (Vo), which is the most frequently observed intrinsic defect in HfO2-based films, determines the physical/electrical properties and device performance. Vo influences the polymorphism and the resulting ferroelectric properties of HfO2. Moreover, the switching speed and endurance of ferroelectric memories are strongly correlated to the Vo concentration and redistribution. They also strongly influence the device-to-device and cycle-to-cycle variability of integrated circuits based on ferroelectric memories. The concentration, migration, and agglomeration of Vo form the main mechanism behind the RS behavior observed in HfO2, suggesting that the device performance and reliability in terms of the operating voltage, switching speed, on/off ratio, analog conductance modulation, endurance, and retention are sensitive to Vo. Therefore, the mechanism of Vo formation and its effects on the chemical, physical, and electrical properties in ferroelectric and RS HfO2 should be understood. This study comprehensively reviews the literature on Vo in HfO2 from the formation and influencing mechanism to material properties and device performance. This review contributes to the synergetic advances of current knowledge and technology in emerging HfO2-based semiconductor devices. English Springer | Korea Nano Technology Research Society Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide Article 10.1186/s40580-023-00403-4 1 Nano Convergence, v.10, no.1 Nano Convergence 10 1 Y scie scopus kci 001112714800001 2-s2.0-85178485712 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Review ATOMIC-LAYER DEPOSITION RANDOM-ACCESS MEMORY CHEMICAL-VAPOR-DEPOSITION THIN-FILMS DIELECTRIC-PROPERTIES CONDUCTIVE FILAMENT OPTICAL-PROPERTIES ZIRCONIUM-OXIDE MECHANISM EVOLUTION HfO2 Ferroelectricity Resistive switching Semiconductor Memory device