Kim, Min Gye Jeong, Jun Hyung Ma, Jin Hyun Park, Min Ho Kim, Seunghwan Park, Soohyung Kang, Seong Jun 2024-01-19T08:30:22Z 2024-01-19T08:30:22Z 2023-11-08 2023-11 2050-7526 https://pubs.kist.re.kr/handle/201004/113125 In the past few years, there has been growing interest in ultraviolet (UV) photodetectors for various applications. A key requirement for UV photodetectors is the ability to exclusively detect light in the pure UV range while blocking visible light and avoiding interference from adjacent wavelengths. In this study, an indium-gallium-zinc-oxide (IGZO) thin-film transistor (TFT) was developed as a visible-blind UV phototransistor. To achieve this, chemical engineering was employed using ethylene glycol (EG) and 2-ethoxyethanol (2-EE) in the IGZO active layer. This resulted in a reduction of impurities that could act as subgap states in the thin film and an increase in the presence of hydroxide (OH-) bonds on the surface, effectively suppressing the R/G/B photoresponse induced by trap sites. Simultaneously, the photoresponse under UV illumination was enhanced, leading to a high photosensitivity value of 3.12 x 107. Furthermore, additional ultraviolet ozone (UVO) treatment was performed to further modify the chemical composition. This treatment reduced the light response associated with traps, resulting in clearer detection of blue light near the UV range. The highest photosensitivity of blue light strikingly decreased from 2.30 x 106 to 3.68 x 105 with a UVO duration of 3 min. In particular, the UVO-treated sample exhibited a substantial and dramatic decrease in blue photoresponsivity from 2.1 x 105 to a mere 3.3 at gate bias (VG) = -10 V. It also had a positive impact on the light modulation properties, reducing the recovery time after light exposure and minimizing the persistent photoconductive (PPC) effect. These promising results pave the way for the utilization of 2-EE, EG incorporated-IGZO (2EEG-IGZO) phototransistors with high selectivity in the pure UV region across a wide range of applications, including space communication and environmental monitoring systems. OH--induced IGZO UV phototransistor for the successful suppression of PPC effect. English Royal Society of Chemistry A chemically treated IGZO-based highly visible-blind UV phototransistor with suppression of the persistent photoconductivity effect Article 10.1039/d3tc02756b 1 Journal of Materials Chemistry C, v.11, no.43, pp.15178 - 15196 Journal of Materials Chemistry C 11 43 15178 15196 N scie scopus 001087693400001 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article THIN-FILM TRANSISTORS LOW-TEMPERATURE ZINC-OXIDE OPTICAL-PROPERTIES BIAS STRESS PERFORMANCE LAYER ZNO INSTABILITY IMPROVEMENT