Lee, Kyoung Su Kim, Young-Hwan Kim, In Soo Kim, Eun Kyu 2024-01-19T08:32:17Z 2024-01-19T08:32:17Z 2023-09-14 2023-10 0040-6090 https://pubs.kist.re.kr/handle/201004/113217 We studied the electrical properties and defect states of methylammonium lead iodide perovskite (MAPbI3) thin film grown onto the TiO2 layer at a temperature of 120 degrees C via a two-step drying process. The TiO2 layer with thickness of 20 nm were formed on fluorine doped tin oxide/glass at 120 degrees C via atomic layer deposition. The MAPbI3 thin film showed & alpha;-phase structure with band gap energy of about 1.61 eV. For the MAPbI3/TiO2 with Ag top and bottom electrodes, the resistance switching phenomena were enhanced compared to the MAPbI3 film without the TiO2 layer. In the MAPbI3/TiO2, two deep level states of E1(Ec-0.38 eV) and H2 (Ev+0.82 eV) appeared from deep level transient spectroscopy measurements. The defect states of E1 and H2 are related to iodine interstitial (Ii) and iodine antisite (IPb), respectively. In the MAPbI3/TiO2, the defect of Ii appeared as the ionized states of Ii+ or Ii , so that it was found that the defect state of Ii caused the MAPbI3/TiO2 to have the resistance random access memory property by the migration of the ionized states. English Elsevier Sequoia Electrical properties and defect analysis of MAPbI3 thin films grown on TiO2 layer through a two-step drying process Article 10.1016/j.tsf.2023.140018 1 Thin Solid Films, v.782 Thin Solid Films 782 N scie scopus 001058885800001 2-s2.0-85167982848 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article HALIDE PEROVSKITES BAND-GAP EFFICIENT MAPbI 3 perovskite Dry process Defect states Resistance change