Eom, Jaeun Lee, In Hak Kee, Jung Yun Cho, Minhyun Seo, Jeongdae Suh, Hoyoung Choi, Hyung-Jin Sim, Yumin Chen, Shuzhang Chang, Hye Jung Baek, Seung-Hyub Petrovic, Cedomir Ryu, Hyejin Jang, Chaun Kim, Young Duck Yang, Chan-Ho Seong, Maeng-Je Lee, Jin Hong Park, Se Young Choi, Jun Woo 2024-01-19T08:33:50Z 2024-01-19T08:33:50Z 2023-10-14 2023-09 2041-1723 https://pubs.kist.re.kr/handle/201004/113296 We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe3-xGeTe2 and the ferroelectric In2Se3 . It is observed that gate voltages applied to the Fe3-xGeTe2/In2Se3 heterostructure device modulate the magnetic properties of Fe3-xGeTe2 with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In2Se3 and Fe3-xGeTe2 lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe3-xGeTe2 coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures. English Nature Publishing Group Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures Article 10.1038/s41467-023-41382-8 1 Nature Communications, v.14, no.1 Nature Communications 14 1 Y scie scopus 001068217000030 2-s2.0-85170646130 Multidisciplinary Sciences Science & Technology - Other Topics Article FERROELECTRICITY FERROMAGNETISM PROSPECTS ENERGY