Lee, Bom Jeong, Byung Joo Choi, Kyung Hwan Cho, Sooheon Jeon, Jiho Kang, Jinsu Zhang, Xiaojie Bang, Hyeon-Seok Oh, Hyung-Suk Lee, Jae-Hyun Yu, Hak Ki Choi, Jae-Young 2024-01-19T08:34:08Z 2024-01-19T08:34:08Z 2023-09-27 2023-09 1944-8244 https://pubs.kist.re.kr/handle/201004/113310 Two-dimensional (2D) palladium phosphide sulfide (PdPS) has garnered significant attention, owing to its exotic physical properties originating from the distinct Cairo pentagonal tiling topology. Nevertheless, the properties of PdPS remain unexplored, especially for electronic devices. In this study, we introduce the thickness-dependent electrical characteristics of PdPS flakes into fabricated field-effect transistors (FETs). The broad thickness variation of the PdPS flakes, ranging from 0.7-306 nm, is prepared by mechanical exfoliation, utilizing large bulk crystals synthesized via chemical vapor transport. We evaluate this variation and confirm a high electron mobility of 14.4 cm2 V-1 s-1 and I on/I off > 107. Furthermore, the 6.8 nm-thick PdPS FET demonstrates a negligible Schottky barrier height at the gold electrode contact, as evidenced by the measurement of the temperature-dependent transfer characteristics. Consequently, we adjusted the Fowler-Nordheim tunneling mechanism to elucidate the charge-transport mechanism, revealing a modulated mobility variation from 14.4 to 41.2 cm2 V-1 s-1 with an increase in the drain voltage from 1 to 5 V. The present findings can broaden the understanding of the unique properties of PdPS, highlighting its potential as a 2D ternary chalcogenide in future electronic device applications. English American Chemical Society Fabrication of a Field-Effect Transistor Based on 2D Novel Ternary Chalcogenide PdPS Article 10.1021/acsami.3c09679 1 ACS Applied Materials & Interfaces, v.15, no.36, pp.42891 - 42899 ACS Applied Materials & Interfaces 15 36 42891 42899 N scie scopus 001061681200001 2-s2.0-85171202438 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article METAL OPTOELECTRONICS HYSTERESIS TRANSPORT CONTACTS NI 2D van der Waals material PdPS Field-effecttransistor Schottky barrier height Fowler-Nordheimtunneling