Lee, Changhyun Song, Hoyoung Hyun, Jiyeon Lee, Sang-Won Choi, Dongjin Pyun, Dowon Kim, Donghwan Kim, Jiryang Bae, Soohyun Lee, Hyunju Kang, Yoonmook Lee, Hae-Seok Nam, Jiyeon 2024-01-19T08:38:56Z 2024-01-19T08:38:56Z 2022-02-26 2021-06 0160-8371 https://pubs.kist.re.kr/handle/201004/113329 Monolithic perovskite-silicon tandem solar cells using MoOx hole selective contact silicon cell as bottom structure shows a power conversion efficiency of 5.7%. A thin (15nm in thickness) MoOx contact to n-type Si was used instead of a standard p(+) emitter to collect holes and the SiOx/n(+) poly-Si structure was applied on the rear of the device for direct tunneling of electrons and blocking holes. With this bottom silicon structure, similar to 14% of devices were manufactured. With this bottom carrier selective silicon cell, tin oxide, and subsequent perovskite structure were deposited to fabricate monolithic tandem solar cells. Monolithic tandem structure without ITO interlayer was also compared to confirm the role of MoOx in tandem cells and this tandem structure shows the power conversion efficiency of 4%. Through this experiment, we have confirmed that the MoOx layer play roles as a passivation layer, hole collecting material, and recombination layer at the same time in the tandem structure. English IEEE Monolithic perovskite-silicon tandem cells using molybdenum oxide hole selective contact silicon solar cells as bottom structures Conference 10.1109/PVSC43889.2021.9519069 1 48th IEEE Photovoltaic Specialists Conference (PVSC), pp.2177 - 2179 48th IEEE Photovoltaic Specialists Conference (PVSC) 2177 2179 US ELECTR NETWORK 2021-06-20 2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) 000701690400498 2-s2.0-85115949294