Kumar, Pankaj Sharma, Aditya Bishnoi, Priyanka Vij, Ankush Kumar, Sandeep Shin, Hyun-Joon Chae, K. H. Lee, B. H. Won, S. O. 2024-01-19T09:00:19Z 2024-01-19T09:00:19Z 2023-08-17 2023-09 0374-4884 https://pubs.kist.re.kr/handle/201004/113340 Pure and doped (Cr and Ge) ZnGa2O4 compounds are prepared using solid-state reaction method. Single-phase nature of pure and doped ZnGa2O4 compounds is investigated using X-ray diffraction (XRD). XRD results indicate lower theta angle shifting, decrease in particle size and tensile strain in the doped samples. A granular morphology of amalgamated particles is seen in the SEM images. EDS results convey, practically, the same concentrations (atm%) of doped elements as used during the preparation. X-ray absorption near-edge structure (XANES) results helped to determine the valence state of elements. O K-edge XANES shows a significant orbital hybridization of O 2p shells with the d shells of doped atoms (i.e., Cr and Ge). Broad PL bands, of nearly the white-light emission, are observed in all of the samples. Modification in the PL intensity and emitted wavelengths, upon doping of Cr3+ and Ge3+ ions, are discussed through the energy transfer mechanisms and defects in the compounds. English 한국물리학회 Synthesis and characterization of ZnGa2O4:Cr3+Ge3+ compounds with tunable photoluminescence properties Article 10.1007/s40042-023-00888-6 1 Journal of the Korean Physical Society, v.83, no.6, pp.463 - 470 Journal of the Korean Physical Society 83 6 463 470 N scie scopus kci 001035685200005 2-s2.0-85165424130 Physics, Multidisciplinary Physics Article RAY-ABSORPTION SPECTROSCOPY ELECTRONIC-STRUCTURE ZNO NANOPARTICLES ZNGA2O4 PHOSPHOR LUMINESCENCE EMISSION STRAIN XRD XANES PL FESEM