Silva, Jose P. B. Alcala, Ruben Avci, Uygar E. Barrett, Nick Begon-Lours, Laura Borg, Mattias Byun, Seungyong Chang, Sou-Chi Cheong, Sang-Wook Choe, Duk-Hyun Coignus, Jean Deshpande, Veeresh Dimoulas, Athanasios Dubourdieu, Catherine Fina, Ignasi Funakubo, Hiroshi Grenouillet, Laurent Gruverman, Alexei Heo, Jinseong Hoffmann, Michael Hsain, H. Alex Huang, Fei-Ting Hwang, Cheol Seong Iniguez, Jorge Jones, Jacob L. Karpov, Ilya V. Kersch, Alfred Kwon, Taegyu Lancaster, Suzanne Lederer, Maximilian Lee, Younghwan Lomenzo, Patrick D. Martin, Lane W. Martin, Simon Migita, Shinji Mikolajick, Thomas Noheda, Beatriz Park, Min Hyuk Rabe, Karin M. Salahuddin, Sayeef Sanchez, Florencio Seidel, Konrad Shimizu, Takao Shiraishi, Takahisa Slesazeck, Stefan Toriumi, Akira Uchida, Hiroshi Vilquin, Bertrand Xu, Xianghan Ye, Kun Hee Schroeder, Uwe 2024-01-19T09:01:14Z 2024-01-19T09:01:14Z 2023-10-29 2023-08 https://pubs.kist.re.kr/handle/201004/113376 Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2-ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development. (c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/5.0148068 English American Institute of Physics Publising LLC Roadmap on ferroelectric hafnia- and zirconia-based materials and devices Article 10.1063/5.0148068 1 APL Materials, v.11, no.8 APL Materials 11 8 Y scie scopus 001063426400002 2-s2.0-85170280278 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article ATOMIC LAYER DEPOSITION HF0.5ZR0.5O2 THIN-FILMS DOPED HFO2 FILMS NEGATIVE CAPACITANCE ENERGY-STORAGE PHASE-TRANSITIONS SWITCHING KINETICS SINGLE-CRYSTALS DOMAIN-WALL WAKE-UP