Cho, Sooheon Jeong, Byung Joo Choi, Kyung Hwan Lee, Bom Jeon, Jiho Lee, Sang Hoon Kim, Bum Jun Lee, Jae-Hyun Oh, Hyung-Suk Yu, Hak Ki Choi, Jae-Young 2024-01-19T09:02:07Z 2024-01-19T09:02:07Z 2023-08-24 2023-08 2637-6113 https://pubs.kist.re.kr/handle/201004/113414 The unique puckered pentagonal structure of the layeredsemiconductormaterial palladium phosphorus selenide (PdPSe) has gathered attention,but its electronic performance has not been thoroughly investigated.In this study, PdPSe is synthesized via chemical vapor transport,and its thickness-dependent electrical properties are examined from1.4 to 309 nm via the field-effect transistor (FET) measurement. Thematerial exhibits n-type semiconducting behavior, with relativelyhigh mobility observed at a specific thickness range, reaching upto 4.9 cm(2) V-1 s(-1) witha maximum on/off ratio of 2.86 x 10(8) at a V (ds) of 1 V. The transport mechanism is analyzedby calculating the Schottky barrier height (SBH) using a thermionicemission model. Temperature-dependent analysis revealed that the devicehas a minuscule SBH and the PdPSe FET device follows the Fowler-Nordheimtunneling model. Through drain-voltage-dependent FET characteristicanalysis, an improvement in carrier mobility up to 33 cm(2) V-1 s(-1) is observed at a highdrain voltage of 10 V. These findings provide fundamental insightsinto the performance of PdPSe FETs and their potential use in next-generationelectronic applications based on two-dimensional (2D) materials. English AMER CHEMICAL SOC Two-Dimensional van der Waals Material PdPSe: Investigation on Electrical Transport Article 10.1021/acsaelm.3c00629 1 ACS Applied Electronic Materials, v.5, no.8, pp.4409 - 4416 ACS Applied Electronic Materials 5 8 4409 4416 N scie scopus 001045171100001 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Engineering Materials Science Article TRANSISTORS two-dimensional material PdPSe field-effecttransistor thickness-dependent property chargetransport mechanism