Park, Jimin Son, Jangyup Park, Sang Kyu Lee, Dong Su Jeon, Dae-Young 2024-01-19T09:03:20Z 2024-01-19T09:03:20Z 2023-06-08 2023-08 0957-4484 https://pubs.kist.re.kr/handle/201004/113465 Ambipolar field-effect transistors (FETs) possessing both electron and hole carriers enable implementation of novel reconfigurable transistors, artificial synaptic transistors, and output polarity controllable (OPC) amplifiers. Here, we fabricated a two-dimensional (2D) material-based complementary ambipolar FET and investigated its electrical characteristics. Properties of ohmic-like contacts at source/drain sides were verified from output characteristics and temperature-dependent measurements. The symmetry of electron and hole currents can be easily achieved by optimization of the MoS2 or WSe2 channels, different from the conventional ambipolar FET with fundamental issues related to Schottky barriers. In addition, we demonstrated successful operation of a complementary inverter and OPC amplifier, using the fabricated complementary ambipolar FET based on 2D materials. English Institute of Physics Publishing Two-dimensional material-based complementary ambipolar field-effect transistors with ohmic-like contacts Article 10.1088/1361-6528/acd2e3 1 Nanotechnology, v.34, no.32 Nanotechnology 34 32 N scie scopus 000993107400001 2-s2.0-85160455031 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article BULK PHYSICS 2D materials ambipolar field-effect transistors ohmic-like contacts output polarity controllable amplifiers Schottky barrier symmetry of electron and hole current