Jung, Soo Young Choi, Hyung-Jin Lee, Jun Young Kim, Min-Seok Ning, Ruiguang Han, Dong-Hun Kim, Seong Keun Won, Sung Ok Lee, June Hyuk Jang, Ji-Soo Jang, Ho Won Baek, Seung-Hyub 2024-01-19T09:04:07Z 2024-01-19T09:04:07Z 2023-08-17 2024-07 1738-8090 https://pubs.kist.re.kr/handle/201004/113505 Epitaxial buffer layers such as ceria (CeO2)/yttria-stabilized zirconia (YSZ) allow the direct integration of functional oxide single crystal thin films on silicon (Si). Microcracks in the buffer layer, often evolving from the large thermal tensile stress, are detrimental to the integration of high-quality complex oxide thin films on Si. In this study, we investigated the evolution of microcracks in sputter-grown epitaxial CeO2 layers by systematically varying the sputtering power and thickness of CeO2 thin films on YSZ single crystal (low thermal mismatch) and YSZ-buffered Si (high thermal mismatch) substrates. Using a plane stress model, we revealed that as the sputtering power increased, the epitaxial CeO2 thin films tended to be more compressively strained at the growth temperature. This could accommodate the tensile strain arising during cooling to room temperature, thereby suppressing the evolution of microcracks. Our result provides not only a method to suppress microcracks in the oxide heterostructure on Si, but also a tool to control their strain state, by controlling their growth parameters.{GRAPHIACAL ABSTRACT} English 대한금속·재료학회 Evolution of Microcracks in Epitaxial CeO2 Thin Films on YSZ-Buffered Si Article 10.1007/s13391-023-00449-w 1 Electronic Materials Letters, v.20, no.4, pp.484 - 490 Electronic Materials Letters 20 4 484 490 N scie scopus kci ART003089591 001036622700001 2-s2.0-85165654425 Materials Science, Multidisciplinary Materials Science Article STRAIN RELAXATION THERMAL-EXPANSION SILICON STRESSES CRACKING GROWTH Epitaxial oxide heterostructure Si Crack Buffer CeO2