Chung, Hong Keun Kim, Han Jeon, Jihoon Kim, Sung-Chul Won, Sung Ok Harada, Ryosuke Tsugawa, Tomohiro Chung, Yoon Jang Baek, Seung-Hyub Park, Tae Joo Kim, Seong Keun 2024-01-19T09:04:21Z 2024-01-19T09:04:21Z 2023-08-02 2023-07 1948-7185 https://pubs.kist.re.kr/handle/201004/113518 Understanding the initial growthprocess during atomiclayer deposition(ALD) is essential for various applications employing ultrathin films.This study investigated the initial growth of ALD Ir films using tricarbonyl-(1,2,3-& eta;)-1,2,3-tri(tert-butyl)-cyclopropenyl-iridium and O-2. IsolatedIr nanoparticles were formed on the oxide surfaces during the initialgrowth stage, and their density and size were significantly influencedby the growth temperature and substrate surface, which strongly affectedthe precursor adsorption and surface diffusion of the adatoms. Higher-densityand smaller nanoparticles were formed at high temperatures and onthe Al2O3 surface, forming a continuous Ir filmwith a smaller thickness, resulting in a very smooth surface. Thesefindings suggest that the initial growth behavior of the Ir filmsaffects their surface roughness and continuity and that a comprehensiveunderstanding of this behavior is necessary for the formation of continuousultrathin metal films. English American Chemical Society Nucleation and Layer Closure Behavior of Iridium Films Grown Using Atomic Layer Deposition Article 10.1021/acs.jpclett.3c01369 1 The Journal of Physical Chemistry Letters, v.14, no.28, pp.6486 - 6493 The Journal of Physical Chemistry Letters 14 28 6486 6493 N scie scopus 001027766900001 2-s2.0-85165518296 Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Atomic, Molecular & Chemical Chemistry Science & Technology - Other Topics Materials Science Physics Article ELECTRICAL-RESISTIVITY MODEL POLYCRYSTALLINE FILMS ELECTRODES NANOPARTICLES REFLECTION OXYGEN METAL TIO2